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2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)
2SK3407
Switching Regulator Applications
* * * * Low drain-source ON resistance: RDS (ON) = 0.48 (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ C C
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
SC-67 2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit C/W C/W
Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature. This transistor is an electrostatic sensitive device. Please handle with caution.
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2SK3407
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ID = 5 A VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = 5 A Min 30 450 2.4 3.5 Typ. 0.48 7.5 1400 240 590 35 Max 10 100 3.4 0.65 pF Unit A V A V V S
10 V VGS 0V 50

ns
VOUT
Turn-on time Switching time Fall time
ton
RL = 40
50
tf Duty < 1%, tw = 10 s = VDD 200 V -

80

nC
Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain "miller" charge
toff Qg Qgs Qgd
260 35 19 16
VDD 360 V, VGS = 10 V, ID = 10 A -

Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10 A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 280 2.7 Max 10 40 -1.7 Unit A A V ns C
Marking
K3407
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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ID - VDS
10 Common source Tc = 25C Pulse test 15 20 10 6 16 15 10
ID - VDS
Common source Tc = 25C Pulse test 6.5 12 6.25 6 8 5.5 4 VGS = 4.5 V 10 0 0 10 20 30 40 50
8
6.75
Drain current ID (A)
6
5.75
5.5 4 5.25 2 5 VGS = 4.5 V 0 0 2 4 6 8
Drain-source voltage
VDS (V)
Drain current ID (A)
Drain-source voltage
VDS (V)
ID - VGS
20 Common source VDS = 20 V Pulse test 10
VDS - VGS
Common source Tc = 25C Pulse test
VDS (V)
16
8
Drain current ID (A)
Drain-source voltage
12
6
ID = 10 A
8 25 4 100 Tc = -55C
4 5 2 2.5 0 0
0 0
2
4
6
8
10
4
8
12
16
20
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID
(S)
30 Common source VDS = 20 V 10 Pulse test
RDS (ON) - ID
5 Common source 25 100 Tc = 25C Pulse test
Forward transfer admittance Yfs
Drain-source ON resistance RDS (ON) ()
Tc = -55C
3
1 VGS = 10, 15 V
1
0.3
0.1 0.1
0.3
1
3
10
30
100
0.1 1
10
100
Drain current ID (A)
Drain current ID (A)
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2SK3407
RDS (ON) - Tc
2.0 Common source VGS = 10 V Pulse test 100 Common source Tc = 25C 10 Pulse test
IDR - VDS
Drain-source ON resistance RDS (ON) ()
1.6
5 1.2 ID = 10 A 2.5 0.8
Drain reverse current IDR
(A)
1 10 5 0.1 3 1 0.01 0 VGS = 0, -1 V -0.6 -0.8 -1 -1.2
0.4
0 -80
-40
0
40
80
120
160
-0.2
-0.4
Case temperature Tc
(C)
Drain-source voltage
VDS (V)
Capacitance - VDS
3000 Ciss 6
Vth - Tc
Common source VDS = 10 V ID = 1 mA Pulse test
Vth (V) Gate threshold voltage
300
1000
5
Capacitance C
(pF)
300
4
100
Coss
3
30 Common source VGS = 0 V 10 f = 1 MHz Tc = 25C 3 0.1 0.3 1 3 10 30 100 Crss
2
1
0 -80
-40
0
40
80
120
160
Drain-source voltage
VDS (V)
Case temperature Tc
(C)
PD - Tc
50 500
Dynamic input/output characteristics
Common source ID = 10 A Tc = 25C Pulse test 20
Drain power dissipation PD (W)
VDS (V)
40
400 VDS
16
Drain-source voltage
180 200 360 8
20
10
100
VGS
4
0 0
40
80
120
160
200
0 0
10
20
30
40
0 50
Case temperature Tc
(C)
Total gate charge Qg (nC)
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Gate-source voltage
30
300
VDD = 90 V
12
VGS (V)
2SK3407
rth - tw
10 5 3
Normalized transient thermal impedance rth (t)/Rth (ch-c)
1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.02 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 100 1m 10 m 100 m 1 10 0.05
0.01 0.005 0.003
0.01
0.001 10
Pulse width
tw
(S)
Safe operating area
100 ID max (pulse) * 400
EAS - Tch
Avalanche energy EAS (mJ)
ID max (continuous) 10
100 s *
300
(A)
1 ms *
200
Drain current ID
1
DC operation Tc = 25C
100
0 25 0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 VDSS max
50
75
100
125
150
Channel temperature (initial) Tch (C)
15 V -15 V
BVDSS IAR VDD VDS
Drain-source voltage
VDS (V)
Test circuit RG = 25 VDD = 90 V, L = 3.7 mH
Wave form
AS =
1 B VDSS L I2 B 2 VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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